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Same model may have multiple batches, images only for reference.
TPCS8009-H(TE12L,Q
Same model may have multiple batches, images only for reference.

TPCS8009-H(TE12L,Q

Part No TPCS8009-H(TE12L,Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans Mosfet N-ch 150V 2.1A 8-PIN TSSOP T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSSOP
Continuous Drain Current (ID) 2.1 A
Drain to Source Breakdown Voltage 150 V
Drain to Source Resistance 350 mΩ
Drain to Source Voltage (Vdss) 150 V
Fall Time 20 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 600 pF
Mount Surface Mount
Number of Pins 8
Packaging Tape & Reel (TR)
Power Dissipation 1.5 W
Rds On Max 350 mΩ
Resistance 350 mΩ
Rise Time 35 ns
RoHS Compliant
Win Source Part Number 979055-TPCS8009-H(TE12L,Q
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TPCS8009-H(TE12L,Q CAD Model

Description

The Toshiba Semiconductor and Storage TPCS8009-H(TE12L,Q) is a surface-mount MOSFET transistor with a drain-source voltage of 150V and a continuous drain current of 2.1A.

  • Drain-Source Voltage: 150V
  • Continuous Drain Current: 2.1A
  • Drain to Source Resistance: 350 mΩ
  • Gate to Source Voltage: 20V
  • Package: 8-pin TSSOP
  • Packaging: Tape and reel
  • Power Dissipation: 1.5W
  • Input Capacitance: 600pF
  • RoHS Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,260 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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