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TPH4R008NH,L1Q Toshiba Semiconductor and Storage TPH4R008NH,L1Q real image 2 TPH4R008NH,L1Q label picture TPH4R008NH,L1Q label picture 2 TPH4R008NH,L1Q real image
Same model may have multiple batches, images only for reference.
TPH4R008NH,L1Q Toshiba Semiconductor and Storage TPH4R008NH,L1Q real image 2 TPH4R008NH,L1Q label picture TPH4R008NH,L1Q label picture 2 TPH4R008NH,L1Q real image
TPH4R008NH,L1Q Toshiba Semiconductor and Storage TPH4R008NH,L1Q real image 2 TPH4R008NH,L1Q label picture TPH4R008NH,L1Q label picture 2 TPH4R008NH,L1Q real image
Same model may have multiple batches, images only for reference.

TPH4R008NH,L1Q

Part No TPH4R008NH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 80V 60A SOP ADV
Datasheet
TPH4R008NH,L1Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 5300pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 78W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 30A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 127471-TPH4R008NH,L1Q
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPH4R008NH,L1Q CAD Model

Description

The Toshiba TPH4R008NH,L1Q is an N-channel MOSFET transistor with a power dissipation of 1.6W (Ta) and 78W (Tc).

  • GPTDescription: It has a drain-source breakdown voltage of 80V and a continuous drain current @ 25°C of 60A (Tc).
  • GPTDescription: The gate-source threshold voltage is 4V @ 1mA and the maximum gate charge is 59nC @ 10V.
  • GPTDescription: The maximum Rds On @ Id,Vgs is 4 mOhm @ 30A, 10V.
  • GPTDescription: The supply and demand status is balanced.
  • GPTDescription: The package is a 8-SOP Advance (5x5) and the technology is SMD (SMT) MOSFET.

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