The Toshiba Semiconductor and Storage MOSFET (Metal Oxide) transistor is a high-performance N-Channel FET type component.

• Manufacturer: Toshiba Semiconductor and Storage
• Type: N-Channel FET
• Drain to Source Voltage (Vdss): 60 V
• Drain Current (Id) @ 25°C: 72A (Tc)
• Maximum On-Resistance (Rds On): 3.5mOhm @ 36A, 10V
• Gate Charge (Qg): 29 nC @ 10 V
• Input Capacitance (Ciss): 2770 pF @ 30 Vds
• Package: 8-TSON Advance (3.1x3.1)
• Temperature Range: 175°C
• Ideal for: transistors, FETs, MOSFETs, and other electronic devices.