The Toshiba Semiconductor and Storage MOSFET is a N-Channel polarity transistor designed for use in discrete semiconductor products.

• Polarity: N-Channel
• Use: Discrete Semiconductor Products
• Maximum Power Dissipation: 700mW (Ta), 39W (Tc)
• Drain-Source Breakdown Voltage: 150V
• Continuous Drain Current: 9A (Ta) @ 25°C
• Gate-Source Threshold Voltage: 4V @ 200μA
• Maximum Gate Charge: 7nC @ 10V
• Maximum Input Capacitance: 600pF @ 75V
• Maximum Rds On: 59 mOhm @ 4.5A, 10V
• Mounting Type: SMD (SMT)
• Packaging: 8-TSON Advance (3.3x3.3)