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Same model may have multiple batches, images only for reference.
TPW4R008NH,L1Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPW4R008NH,L1Q

Part No TPW4R008NH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 116A 8DSOP / Trans MOSFET N-CH Si 80V 116A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 80V
Current - Continuous Drain (Id) @ 25°C 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 59nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5300pF @ 40V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 800mW (Ta), 142W (Tc)
Rds On (Maximum) @ Id, Vgs 4 mOhm @ 50A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package 8-DSOP Advance
Package 8-PowerWDFN
Win Source Part Number 798343-TPW4R008NH,L1Q
Popularity Medium
Supply and Demand Status Limited
Family Name TPW4R008NH
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TPW4R008NH,L1Q CAD Model

Description

The TPW4R008NH,L1Q MOSFET is manufactured by Toshiba Semiconductor and Storage.

  • Continuous Drain Current: 116A (Tc)
  • Maximum Power Dissipation: 800mW (Ta), 142W (Tc)
  • Gate Charge: 59nC @ 10V
  • Input Capacitance: 5300pF @ 40V
  • On-Resistance: 4 mOhm @ 50A, 10V
  • Series: U-MOSVIII-H
  • Applications: Discrete Semiconductor Products
  • Package: 8-PowerWDFN
  • Mounting: SMD
  • Operating Temperature Range: 150°C (TJ)

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