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Same model may have multiple batches, images only for reference.
TRS12N65D,S1F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TRS12N65D,S1F

Part No TRS12N65D,S1F
Manufacturer Toshiba Semiconductor and Storage
Catalog Diodes, Rectifiers - Arrays
Description DIODE ARRAY SCHOTTKY 650V TO247
Datasheet
TRS12N65D,S1F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Diode Configuration 1 Pair Common Cathode
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 650V
Current - Average Rectified (Io) (per Diode) 6A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7V @ 6A
Speed(Frequency) Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr 90μA @ 650V
Operating Temperature - Junction 175°C (Max)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 1001390-TRS12N65D,S1F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TRS12N65D,S1F CAD Model

Description

The Toshiba Semiconductor and Storage TRS12N65D,S1F is a Schottky diode with a maximum DC reverse voltage (Vr) of 650V.

  • Maximum DC Reverse Voltage (Vr): 650V
  • Maximum Forward Voltage (Vf): 1.7V @ 6A
  • Reverse Leakage Current @ Vr: 90μA @ 650V
  • Operating Temperature - Junction: 175°C (Max)
  • Diode Configuration: 1 Pair Common Cathode
  • Average Rectified Current (Io) (per diode): 6A (DC)
  • Case/Package: TO-247
  • Recovery Speed (Frequency): 200mA (Io)

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $91.6065 $91.6065
2+ $75.1639 $150.3278
3+ $72.8158 $218.4474
4+ $70.4666 $281.8664
5+ $68.1173 $340.5865
6+ $61.0706 $366.4236
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