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Same model may have multiple batches, images only for reference.
TRS24N65FB,S1Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TRS24N65FB,S1Q

Part No TRS24N65FB,S1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Diodes, Rectifiers - Arrays
Description SIC SBD TO-247 V=650 IF=12A / Diode Array 1 Pair Common Cathode Silicon Carbide Schottky 650 V 12A (DC) Through Hole TO-247-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Arrays
Mfr Toshiba Semiconductor and Storage
Package Tube
Diode Configuration 1 Pair Common Cathode
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) (per Diode) 12A (DC)
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 12 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 650 V
Operating Temperature - Junction 175°C
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Base Product Number TRS24N65
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Other Names 264-TRS24N65FBS1Q
Standard Package 30
Win Source Part Number 1215450-TRS24N65FB,S1Q
Ultra Librarian 3D Model Ultra Librarian TRS24N65FB,S1Q CAD Model

Description

The 1215450-TRS24N65FB,S1Q is a silicon carbide Schottky diode from Toshiba Semiconductor and Storage, designed for use in rectifier arrays.

  • DC Reverse Voltage (Max): 650V
  • Forward Voltage: 1.6V @ 12A
  • Reverse Recovery Time: 0ns
  • Average Rectified Current: 12A per diode
  • Operating Temperature: 175°C
  • Configuration: 1 pair common cathode
  • Package: TO-247-3
  • Packaging: Tube

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