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TRS4E65F,S1Q

Name: TRS4E65F,S1Q
Brand: Toshiba Semiconductor and Storage
SKU: 1225139
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	TRS4E65F,S1Q
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Diodes, Rectifiers - Single
Description	PB-F DIODE TO-220-2L V=650 IF=4A / Diode Silicon Carbide Schottky 650 V 4A (DC) Through Hole TO-220-2L
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr	Toshiba Semiconductor and Storage
Package	Tube
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	4A (DC)
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 4 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	20 µA @ 650 V
Capacitance @ Vr, F	16pF @ 650V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220-2L
Operating Temperature - Junction	175°C (Max)
Base Product Number	TRS4E65
ECCN	EAR99
HTSUS	8541.10.0080
Other Names	TRS4E65F,S1Q(S,264-TRS4E65FS1Q
Standard Package	50
Win Source Part Number	1225139-TRS4E65F,S1Q
Ultra Librarian 3D Model	Ultra Librarian TRS4E65F,S1Q CAD Model

Alternative Products

Description

The Toshiba Semiconductor and Storage TRS4E65F,S1Q is a silicon carbide Schottky diode with a voltage of 650 V and a current of 4A (DC).

Voltage: 650 V
Current: 4A (DC)
Voltage Forward (Vf) @ 4A: 1.6 V
Reverse Recovery Time (trr): 0 ns
Current Reverse Leakage @ Vr: 20 µA @ 650 V
Capacitance @ Vr, F: 16pF @ 650V, 1MHz
Operating Temperature - Junction: 175°C (Max)
Mounting Type: Through Hole
Package/Case: TO-220-2
Supplier Device Package: TO-220-2L
ECCN: EAR99
HTSUS: 8541.10.0080

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
40+	$1.4094	$56.3760
90+	$1.1565	$104.0850
135+	$1.1203	$151.2405
185+	$1.0842	$200.5770
240+	$1.0481	$251.5440
320+	$0.9396	$300.6720

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 20,000 pieces

MOQ: 40 pcs

Order Increment : 1 pcs

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