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TTC3710B,S4X

Part No TTC3710B,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TTC3710B,S4X Toshiba Bipolar Transistors - BJT Bipolar Transistors Silicn NPN Epitaxial datasheet, inventory, & pricing.
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba
Product Category Bipolar Transistors - BJT
RoHS Details
Technology Si
Mounting Style Through Hole
Package / Case TO-220-3
Transistor Polarity NPN
Configuration Single
Maximum DC Collector Current 12 A
Collector- Emitter Voltage VCEO Max 80 V
Collector- Base Voltage VCBO 80 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 160 mV
Pd - Power Dissipation 30 W
Gain Bandwidth Product fT 80 MHz
Maximum Operating Temperature + 150 C
Packaging Tube
Brand Toshiba
Continuous Collector Current 15 A
DC Current Gain hFE Max 240 V
Product Type BJTs - Bipolar Transistors
Factory Pack Quantity Factory Pack Quantity 50
Subcategory Transistors
Ultra Librarian 3D Model Ultra Librarian TTC3710B,S4X CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3657 $52.3884
28+ $3.5821 $100.2988
44+ $3.4702 $152.6888
60+ $3.3583 $201.4980
78+ $3.2463 $253.2114
104+ $2.9105 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,600 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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