The 19N10VL-TN3-R is an N-channel enhancement mode power MOSFET from UTC (Unisonic Technologies Co., Ltd.). This MOSFET is designed to provide high efficiency and fast switching speeds for a variety of applications. It features a low on-resistance (RDS(on)) to minimize power losses and improve overall system efficiency.

Applications:

• Switching power supplies
• DC-DC converters
• Motor control
• LED lighting
• Battery management systems

Features:

• N-channel enhancement mode
• Low on-resistance (RDS(on))
• High switching speed
• Avalanche energy rated
• Lead-free package
• RoHS compliant

Benefits:

• Improved system efficiency due to low RDS(on)
• Fast switching speeds for reduced switching losses
• Reliable operation in demanding applications
• Environmentally friendly due to lead-free construction
• Cost-effective solution for power management

Additional Details:

The 19N10VL-TN3-R is designed to operate at voltages up to 100V and currents up to 19A. It has low gate charge which helps to reduce switching losses and improve efficiency at high switching frequencies. The device is avalanche energy rated, providing robustness against voltage spikes and transients. The RDS(on) is specified at various gate-source voltages to allow for optimized designs. The device is provided in a TO-252 package. This device is suitable for applications that require efficient power conversion. The low on-resistance minimizes heat dissipation, increasing overall system reliability and lifetime.

The MOSFET is designed with robust gate oxide and provides a wide Safe Operating Area (SOA), which is a very important feature for reliable operation in harsh conditions. The device is offered in tape and reel packaging to facilitate automated assembly processes.