The 2SB1132L-R-AB3-R is a PNP epitaxial planar transistor manufactured by UTC (Unisonic Technologies Co., Ltd.). It is designed for use in low-frequency power amplifier and switching applications. This transistor offers excellent linearity and high current gain.

Applications

• Audio amplifiers
• Switching circuits
• DC-DC converters
• Power management systems

Features

• High current gain (hFE)
• Low saturation voltage
• Excellent linearity
• PNP transistor

Benefits

• Enhanced audio quality in amplifier circuits
• Efficient switching performance
• Stable operation over a wide range of conditions

Technical Specifications

The 2SB1132L-R-AB3-R features a collector-emitter voltage (VCEO) of -50V, a collector current (IC) of -2A, and a power dissipation (PD) of 1W. The current gain (hFE) is typically between 100 and 320. This transistor comes in a SOT-89 package.

It is particularly suitable for low-frequency power amplification and switching circuits needing good linearity and gain.