The 3N60L-TN3-R is a Power MOSFET from UTC (Unisonic Technologies Co., Ltd.). It's an N-channel enhancement mode MOSFET designed for high-voltage, high-speed switching applications. This device offers low gate charge and excellent ruggedness, making it suitable for various power management circuits.

Applications

• Switching Power Supplies (SMPS)
• PWM Motor Control
• DC-DC Converters
• Electronic Ballasts for Lighting
• Uninterruptible Power Supplies (UPS)
• Power Factor Correction (PFC) circuits

Features

• N-Channel Enhancement Mode
• Low Gate Charge
• High Voltage: 600V
• Low On-Resistance (RDS(on))
• Fast Switching Speed
• Avalanche Ruggedness

Benefits

• Efficient Power Conversion
• Reduced Switching Losses
• Improved System Reliability
• Simplified Drive Circuitry
• Higher Power Density
• Enhanced Thermal Performance

Additional Details

The 3N60L-TN3-R has a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 3A. Its on-resistance (RDS(on)) is typically around 3.5 Ohms at a gate-source voltage of 10V. The gate charge (Qg) is relatively low, which minimizes switching losses and improves efficiency. The device is packaged in a TO-251 package (TN3). It features a fast body diode recovery time, further reducing switching losses. The MOSFET is designed to operate over a wide temperature range, typically from -55°C to +150°C. Its avalanche ruggedness ensures that it can withstand voltage spikes and transients, improving the overall robustness of the power system. It's designed to meet industry standards for safety and reliability, making it a suitable choice for demanding power applications.