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6N10G-TN3-R

Part No 6N10G-TN3-R
Manufacturer UTC
Catalog Hard To Find
Description 6 Amps, 100 Volts N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer UTC
Win Source Part Number 1129648-6N10G-TN3-R
Manufacturer Homepage www.utc-ic.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 6N10G-TN3-R CAD Model

Description

The 6N10G-TN3-R is an N-channel enhancement mode power MOSFET from UTC (Unisonic Technologies Co., Ltd.). It is designed for high-efficiency switching applications. This MOSFET utilizes advanced trench technology to minimize on-state resistance and gate charge, resulting in superior switching performance. It's commonly used in power management circuits, DC-DC converters, and motor control applications.

Applications:

  • DC-DC Converters: Used for voltage regulation in various electronic devices.
  • Power Management Circuits: Employed in power supplies and battery chargers.
  • Motor Control: Used in speed control and drive circuits for small motors.
  • LED Lighting: Can be found in LED drivers for efficient power delivery.
  • Load Switching: Used as a switch to control power to various loads.

Features:

  • Low On-Resistance: Minimizes power loss and increases efficiency.
  • Fast Switching Speed: Enables high-frequency operation.
  • Low Gate Charge: Reduces drive power requirements.
  • Avalanche Rated: Provides robustness against voltage spikes.
  • RoHS Compliant: Environmentally friendly, adhering to RoHS standards.

Benefits:

  • Improved Efficiency: Low on-resistance reduces power dissipation, leading to higher efficiency.
  • Reduced Heat Dissipation: Lower power losses result in less heat generated, simplifying thermal management.
  • Enhanced System Reliability: Robust design and avalanche rating improve overall system reliability.
  • Compact Design: Small package size allows for space-saving designs.
  • Simplified Circuit Design: Easy to use and integrate into various circuits.

Additional Details:

The 6N10G-TN3-R typically comes in a TO-252 package. Key specifications include a drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 6A, and an on-resistance (Rds(on)) of typically 0.18Ω at Vgs = 10V. The gate threshold voltage is typically between 2V and 4V. It is important to consult the datasheet for specific operating conditions and thermal considerations. This MOSFET is suitable for applications requiring a balance of voltage, current, and switching speed.

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