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UTT25P06G-TN3-R

Part No UTT25P06G-TN3-R
Manufacturer UTC
Catalog Electronic Wholesale
Description -60 V, -27.5 A P-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer UTC
Win Source Part Number 1278705-UTT25P06G-TN3-R
Manufacturer Homepage www.utc-ic.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UTT25P06G-TN3-R CAD Model

Description

The UTT25P06G-TN3-R is a P-channel enhancement-mode MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd.). This MOSFET is designed for a variety of power management and switching applications. Its key characteristics include a low on-resistance, which minimizes power loss and improves efficiency, and a fast switching speed, making it suitable for high-frequency applications.

Applications

  • DC-DC Converters: Used in voltage regulation and power conversion circuits.
  • Load Switching: Employed to control power to various loads efficiently.
  • Power Management in Portable Devices: Ideal for battery-powered devices due to its low on-resistance.
  • Motor Control: Suitable for controlling small DC motors.
  • LED Lighting: Used in LED drivers for efficient power delivery.

Features

  • P-Channel Enhancement Mode: Simplifies driving circuitry.
  • Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • Fast Switching Speed: Enables use in high-frequency applications.
  • Low Gate Charge (Qg): Reduces driving power requirements.
  • High Avalanche Energy: Provides robustness against voltage spikes.

Benefits

  • Improved Efficiency: Low on-resistance reduces power dissipation, leading to higher efficiency.
  • Reduced Heat Generation: Lower power loss translates to less heat, improving system reliability.
  • Simplified Design: P-channel configuration simplifies gate drive circuitry.
  • Extended Battery Life: Low power consumption makes it ideal for portable devices.
  • Enhanced Reliability: High avalanche energy provides protection against voltage transients.

Additional Details

The UTT25P06G-TN3-R typically comes in a surface-mount package, such as a TO-252 or similar. Key specifications include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and power dissipation (PD). Always consult the datasheet for specific values. It is crucial to adhere to the recommended operating conditions to ensure optimal performance and longevity of the component. The device is RoHS compliant, ensuring it meets environmental standards.

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