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3N163

Part No 3N163
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 50MA TO-72
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 20V
Gate-Source Threshold Voltage 5V @ 10μA
Max Input Capacitance 3.5pF @ 15V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 375mW (Ta)
Maximum Rds On at Id,Vgs 250 Ohm @ 100μA, 20V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-72
Dimension TO-206AF, TO-72-4 Metal Can
Win Source Part Number 006139-3N163
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 3N163 CAD Model

Description

The 3N163 is a reliable N-channel MOSFET designed to maximize efficiency and minimize loss. Its robust design ensures stability in various electronic environments.

Applications

  • Amplifiers
  • RF Circuits
  • Power Management
  • Automotive Electronics

Features and Benefits

  • Low drain-source on resistance
  • Fast-switching for reduced delay
  • Durable construction
  • Ideal for high-frequency applications

This MOSFET is optimized for performance and stability, making it suitable for both consumer and automotive electronics.

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Shipped from HK warehouse
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