The Vishay General Semiconductor - Diodes Division Avalanche diode is a fast recovery electronic component with a speed of < 500ns, > 200mA (Io). It has a voltage - DC reverse (Vr) (Max) of 400 V, a current - average rectified (Io) of 1.8A, and a voltage - forward (Vf) (Max) @ If of 1.6 V @ 3 A. The reverse recovery time (trr) is 140 ns, and the current - reverse leakage @ Vr is 10 μA @ 400 V. The capacitance @ Vr, F is 44pF @ 4V, 1MHz, and the operating temperature - junction is -55°C ~ 175°C. It comes in a TO-277A (SMPC) case / package.