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Same model may have multiple batches, images only for reference.
IRF620SPBF
Same model may have multiple batches, images only for reference.

IRF620SPBF

Part No IRF620SPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 5.2A D2PAK
Datasheet
IRF620SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 260pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 800 mOhm @ 3.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017445-IRF620SPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF620SPBF CAD Model

Description

The IRF620SPBF is an N-Channel MOSFET transistor from Vishay.

  • Maximum Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 5.2A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Input Capacitance: 260pF @ 25V
  • Maximum On-Resistance: 800 mOhm @ 3.1A and 10V gate-source voltage
  • Package: D2PAK
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.8987 $56.9610
65+ $1.5579 $101.2635
100+ $1.5092 $150.9200
140+ $1.4606 $204.4840
180+ $1.4119 $254.1420
240+ $1.2658 $303.7920
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Availability: 2,000 pieces
MOQ: 30 pcs
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