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Same model may have multiple batches, images only for reference.
IRF830ASPBF Real Image
Same model may have multiple batches, images only for reference.

IRF830ASPBF

Part No IRF830ASPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5A D2PAK
Datasheet
IRF830ASPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 620pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.1W (Ta), 74W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017542-IRF830ASPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF830ASPBF CAD Model

Description

The electronic component with Id 167296 is a medium popularity product from Vishay.

  • Type: MOSFET
  • Polarity: N-Channel
  • Package: D2PAK
  • Maximum Rds On @ Id,Vgs: 1.4 Ohm @ 3A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0852 $59.6860
130+ $0.8904 $115.7520
205+ $0.8626 $176.8330
280+ $0.8348 $233.7440
360+ $0.8070 $290.5200
480+ $0.7235 $347.2800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,600 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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