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SI8489EDB-T2-E1

Part No SI8489EDB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V MICROFOOT
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 765pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 780mW (Ta), 1.8W (Tc)
Maximum Rds On at Id,Vgs 44 mOhm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 4-Microfoot
Dimension 4-UFBGA
Win Source Part Number 1096292-SI8489EDB-T2-E1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI8489EDB-T2-E1 CAD Model

Description

The SI8489EDB-T2-E1 is a P-channel MOSFET with a maximum power dissipation of 780mW (Ta), 1.8W (Tc).

  • Manufacturer: Vishay
  • Power Dissipation: 780mW (Ta), 1.8W (Tc)
  • Drive Voltage: 2.5V and 10V
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On: 44 mOhm @ 1.5A, 10V
  • Maximum Gate Charge: 27nC @ 10V
  • Maximum Input Capacitance: 765pF @ 10V
  • Mounting Technology: SMD (SMT)
  • Drain-Source Breakdown Voltage: 20V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Packaging: Reel

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2354 $58.8500
600+ $0.1933 $115.9800
930+ $0.1871 $174.0030
1,280+ $0.1811 $231.8080
1,650+ $0.1751 $288.9150
2,210+ $0.1570 $346.9700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 97,600 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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