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IRF9520STRLPBF

Part No IRF9520STRLPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 6.8A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 390pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 60W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4.1A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 107419-IRF9520STRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9520STRLPBF CAD Model

Description

The Vishay 107419-IRF9520STRLPBF is a P-Channel MOSFET that is suitable for use in Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 6.8A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 600 mOhm @ Id,Vgs: 4.1A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 18nC @ 10V
  • Maximum Input Capacitance: 390pF @ 25V
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
  • Mounted using: SMD (SMT) technology
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Status: active

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