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Same model may have multiple batches, images only for reference.
IRF9530STRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF9530STRRPBF

Part No IRF9530STRRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 12A D2PAK
Datasheet
IRF9530STRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 860pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 88W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 7.2A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 144925-IRF9530STRRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF9530STRRPBF CAD Model

Description

The supply and demand status of this component is limited.

  • Manufacturer: Vishay
  • Win Source Part Number: 144925-IRF9530STRRPBF
  • Polarity: P-Channel
  • Power Dissipation: 3.7W (Ta) and 88W (Tc)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 12A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Input Capacitance: 860pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 300 mOhm @ 7.2A, 10V
  • Category: Discrete Semiconductor Products
  • Status: active
  • Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: D2PAK
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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145+ $1.7314 $251.0530
194+ $1.5523 $301.1462
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MOQ: 22 pcs
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