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IRF9Z14LPBF

Name: IRF9Z14LPBF
Brand: Vishay
SKU: 461969
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRF9Z14LPBF
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 60V 6.7A TO-262
Datasheet	IRF9Z14LPBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Tube/Rail
Status	Active
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	60V
Continuous Drain Current at 25°C	6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	12nC @ 10V
Max Input Capacitance	270pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	3.7W (Ta), 43W (Tc)
Maximum Rds On at Id,Vgs	500 mOhm @ 4A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	I2PAK
Dimension	TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number	1046791-IRF9Z14LPBF
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRF9Z14LPBF CAD Model

Description

The Vishay IRF9Z14LPBF is a P-Channel MOSFET transistor that is designed for use in various applications such as power supplies, DC-DC converters, and motor control circuits.

Maximum Power Dissipation: 3.7W (Ta), 43W (Tc)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current: 6.7A (Tc)
Maximum Rds On @ Id,Vgs: 500 mOhm @ 4A, 10V
Gate-Source Threshold Voltage: 4V @ 250μA
Maximum Gate Charge: 12nC @ 10V
Maximum Input Capacitance: 270pF @ 25V
Maximum Gate-Source Voltage: ±20V
Package: I2PAK package
Operating Temperature Range: -55°C to 175°C (TJ)

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