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Same model may have multiple batches, images only for reference.
IRF9Z14STRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRF9Z14STRLPBF

Part No IRF9Z14STRLPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 6.7A D2PAK
Datasheet
IRF9Z14STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 270pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 43W (Tc)
Maximum Rds On at Id,Vgs 500 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046792-IRF9Z14STRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF9Z14STRLPBF CAD Model

Description

The IRF9Z14STRLPBF from Vishay is a P-channel MOSFET that is designed for use in a variety of electronic circuits.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 6.7A (Tc) @ 25°C
  • Maximum Rds On @ Id, Vgs: 500 mOhm @ 4A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250µA
  • Mounting Type: SMD (SMT)
  • Case/Package: D2PAK
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 12nC @ 10V
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Market Status: Active
  • Supply and Demand Status: Limited
  • Temperature Range: -55°C to 175°C (TJ)

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160+ $0.6379 $102.0640
245+ $0.6179 $151.3855
335+ $0.5980 $200.3300
435+ $0.5781 $251.4735
580+ $0.5183 $300.6140
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MOQ: 65 pcs
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