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Same model may have multiple batches, images only for reference.
IRF9Z20PBF Real Image
Same model may have multiple batches, images only for reference.

IRF9Z20PBF

Part No IRF9Z20PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 50V 9.7A TO-220AB
Datasheet
IRF9Z20PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 480pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 5.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046794-IRF9Z20PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9Z20PBF CAD Model

Description

The electronic component with Id 473306 is a P-Channel MOSFET manufactured by Vishay.

  • Win Source Part Number: 1046794-IRF9Z20PBF
  • Package: tube/rail
  • Mounting: through-hole
  • Maximum Power Dissipation: 40W
  • Drive Voltage: 10V
  • Category: discrete semiconductor product
  • Status: active
  • Temperature Range: -55°C to 150°C
  • Case/Package: TO-220AB
  • Dimensions: TO-220-3
  • Breakdown Voltage (Drain-Source): 50V
  • Continuous Drain Current (25°C): 9.7A
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 26nC @ 10V
  • Maximum Input Capacitance: 480pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 280 mOhm @ 5.6A and 10V
  • Popularity: medium
  • Risk of Fake Products: moderate
  • Supply and Demand: balanced

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