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IRF9Z30PBF

Name: IRF9Z30PBF
Brand: Vishay
SKU: 461977
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF9Z30PBF
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 50V 18A TO-220AB
Datasheet	IRF9Z30PBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Tube/Rail
Status	Active
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	50V
Continuous Drain Current at 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	39nC @ 10V
Max Input Capacitance	900pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	74W (Tc)
Maximum Rds On at Id,Vgs	140 mOhm @ 9.3A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	TO-220AB
Dimension	TO-220-3
Win Source Part Number	1046799-IRF9Z30PBF
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRF9Z30PBF CAD Model

Description

The Vishay MOSFET is a P-Channel component that features a drain-source breakdown voltage of 50V, a gate-source threshold voltage of 4V @ 250μA, and a maximum Rds On @ Id,Vgs of 140 mOhm @ 9.3A, 10V.

Channel Type: P-Channel
Drain-Source Breakdown Voltage: 50V
Gate-Source Threshold Voltage: 4V @ 250μA
Rds On (Max) @ Id,Vgs: 140 mOhm @ 9.3A, 10V
Application: Discrete Semiconductor Products
Input Capacitance (Max): 900pF @ 25V
Power Dissipation: 74W (Tc)
Temperature Range: -55°C to 150°C (TJ)
Mounting: Through Hole
Package: TO-220AB

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