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Same model may have multiple batches, images only for reference.
IRFB9N30A Real Image
Same model may have multiple batches, images only for reference.

IRFB9N30A

Part No IRFB9N30A
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 9.3A TO-220AB
Datasheet
IRFB9N30A Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 920pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 96W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 5.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046832-IRFB9N30A
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFB9N30A CAD Model

Description

The Vishay IRFB9N30A is a MOSFET that is suitable for use in a wide range of applications.

  • Maximum Power Dissipation: 96W (Tc)
  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current: 9.3A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Packaging: Tube/Rail
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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