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IRFBC20STRL

Name: IRFBC20STRL
Brand: Vishay
SKU: 604837
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IRFBC20STRL
Manufacturer	Vishay
Catalog	FETs - Single
Description	Power MOSFET \| MOSFET N-CH 600V 2.2A D2PAK
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tape and Reel
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	600V
Id - Continuous Drain Current	2.2A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	4.4Ohm at 1.3A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	18nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	350pF at 25V
Power Dissipation (Maximum)	3.1W, 50W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	D2PAK
Manufacturer Package	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity	800
MSL Level	1 (Unlimited)
Win Source Part Number	1187525-IRFBC20STRL
Manufacturer Homepage	www.vishay.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRFBC20STRL CAD Model

Alternative Products

Description

The IRFBC20STRL is a N-channel MOSFET transistor that is designed for use in a variety of electronic circuits.

Maximum Drain-Source Breakdown Voltage: 600 V
Maximum Continuous Drain Current: 2.2 A
Maximum Power Dissipation: 50 W
On-Resistance: 4.4 Ohm @ 1.3 A and 10 Vgs
Package: Surface mount D2PAK
Compliance: RoHS compliant
Status: Obsolete and has limited supply and demand status

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