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Same model may have multiple batches, images only for reference.
IRFBC30APBF Real Image
Same model may have multiple batches, images only for reference.

IRFBC30APBF

Part No IRFBC30APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 3.6A TO-220AB
Datasheet
IRFBC30APBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 510pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205350-IRFBC30APBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFBC30APBF CAD Model

Description

The Vishay IRFBC30APBF is a N-Channel MOSFET with a Through Hole mounting style and TO-220AB package.

  • Mounting Style: Through Hole
  • Package: TO-220AB
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 3.6A @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 23nC @ 10V
  • Maximum Input Capacitance: 510pF @ 25V
  • Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V
  • Power Dissipation: 74W (Tc)
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8599 $51.5940
145+ $0.7055 $102.2975
220+ $0.6835 $150.3700
305+ $0.6614 $201.7270
395+ $0.6394 $252.5630
525+ $0.5733 $300.9825
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,430 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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