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Same model may have multiple batches, images only for reference.
IRFBC40PBF Real Image
Same model may have multiple batches, images only for reference.

IRFBC40PBF

Part No IRFBC40PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 6.2A TO-220AB
Datasheet
IRFBC40PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 3.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069466-IRFBC40PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBC40PBF CAD Model

Description

The Vishay IRFBC40PBF N-channel MOSFET is ideal for use in a variety of applications.

  • Maximum Power Dissipation: 125W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 6.2A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Mounting: Through-hole
  • Product Family: Discrete Semiconductor Products
  • Package: Tube/rail
  • Case/Package: TO-220AB
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1049 $55.2450
100+ $1.0349 $103.4900
150+ $1.0000 $150.0000
220+ $0.9300 $204.6000
280+ $0.8951 $250.6280
350+ $0.8601 $301.0350
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Availability: 22,566 pieces
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