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IRFBF20LPBF

Part No IRFBF20LPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 1.7A TO-262
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 490pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 54W (Tc)
Maximum Rds On at Id,Vgs 8 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 136872-IRFBF20LPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFBF20LPBF CAD Model

Description

The Vishay IRFBF20LPBF is an N-Channel MOSFET that has a drain-source breakdown voltage of 900V and a continuous drain current of 1.7A (Tc).

  • Package: I2PAK
  • Maximum Power Dissipation: 3.1W (Ta), 54W (Tc)
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 490pF @ 25V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge: 38nC @ 10V
  • Drive Voltage: 10V
  • Drain-Source Resistance: 8 Ohm @ 1A, 10V
  • Application: suitable for use in circuits that require a low resistance.
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4779 $59.7375
295+ $0.3922 $115.6990
460+ $0.3800 $174.8000
630+ $0.3678 $231.7140
815+ $0.3554 $289.6510
1,090+ $0.3187 $347.3830
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,584 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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