IRFBF30

Part No IRFBF30
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A) | MOSFET N-CH 900V 3.6A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 900V
Id - Continuous Drain Current 3.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3.7Ohm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 78nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1200pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187550-IRFBF30
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited

Description

The IRFBF30 is an N-Channel MOSFET transistor that is manufactured by Vishay Siliconix. It is a medium-popularity electronic component with limited supply and demand status. The device is designed for through-hole mounting and has a TO-220AB package. The product has a Win Source Part Number of 1187550-IRFBF30 and a Manufacturer Homepage of www.irf.com. It has a maximum power dissipation of 125W and a drain-source breakdown voltage of 900V.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
45+ $1.1650 $52.4250
105+ $0.9560 $100.3800
165+ $0.9260 $152.7900
225+ $0.8960 $201.6000
290+ $0.8660 $251.1400
390+ $0.7770 $303.0300
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 9,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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