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IRFBG20PBF

Part No IRFBG20PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 1.4A TO-220AB / Trans MOSFET N-CH 1KV 1.4A 3-Pin(3+Tab) TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V (1kV)
Continuous Drain Current at 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 54W (Tc)
Maximum Rds On at Id,Vgs 11 Ohm @ 840mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017586-IRFBG20PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFBG20
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFBG20PBF CAD Model

Description

The Vishay IRFBG20PBF is an N-channel MOSFET designed for through-hole mounting.

  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 1.4A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 38nC @ 10V
  • Package Type: TO-220AB
  • Mounting Technology: through-hole
  • Risk of Counterfeit: high
  • Popularity: high
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2200 $54.9000
100+ $1.0011 $100.1100
155+ $0.9698 $150.3190
215+ $0.9385 $201.7775
280+ $0.9072 $254.0160
370+ $0.8134 $300.9580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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