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Same model may have multiple batches, images only for reference.
IRFD120PBF Real Image
Same model may have multiple batches, images only for reference.

IRFD120PBF

Part No IRFD120PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1.3A 4-DIP
Datasheet
IRFD120PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 360pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 270 mOhm @ 780mA, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package 4-DIP, Hexdip, HVMDIP
Dimension 4-DIP (0.300", 7.62mm)
Win Source Part Number 017590-IRFD120PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFD120PBF CAD Model

Description

The IRFD120PBF is a N-Channel MOSFET transistor that is manufactured by Vishay.

  • Maximum Power Dissipation: 1.3W (Ta)
  • Drain-Source Breakdown Voltage: 100V
  • Popularity: high
  • Supply and Demand Status: balance
  • Application: commonly used in switching applications
  • Maximum Rds On @ Id,Vgs: 270 mOhm @ 780mA, 10V

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