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Same model may have multiple batches, images only for reference.
IRFD320 Vishay
Same model may have multiple batches, images only for reference.

IRFD320

Part No IRFD320
Manufacturer Vishay
Catalog FETs - Single
Description 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET | MOSFET N-CH 400V 490MA 4-DIP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 400V
Id - Continuous Drain Current 490mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.8Ohm at 210mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 20nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 410pF at 25V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1187566-IRFD320
Manufacturer Homepage www.intersil.com/cda/home
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFD320 CAD Model

Description

The IRFD320 is a N-channel MOSFET transistor with a drain-source breakdown voltage of 400V and a continuous drain current of 490mA.

  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current: 490mA
  • Maximum Rds On: 1.8Ohm @ 210mA
  • Gate-Source Voltage(th): 4V @ 250μA
  • Gate Charge (Qg): 20nC @ 10V
  • Input Capacitance (Ciss): 410pF @ 25V
  • Mounting: Through Hole
  • Power Dissipation: 1W
  • Operating Temperature: -55°C to 150°C
  • Status: Obsolete
  • Popularity: Medium
  • Supply and Demand: Balance

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