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Same model may have multiple batches, images only for reference.
IRFD9010PBF Real Image
Same model may have multiple batches, images only for reference.

IRFD9010PBF

Part No IRFD9010PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 50V 1.1A 4-DIP / Trans MOSFET P-CH 50V 1.1A 4-Pin HVMDIP
Datasheet
IRFD9010PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Channel Type Type P
Technology MOSFET
Drain Source Voltage 50V
Current - Continuous Drain (Id) @ 25°C 1.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 240pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1W (Tc)
Rds On (Maximum) @ Id, Vgs 500 mOhm @ 580mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package 4-DIP, Hexdip, HVMDIP
Package 4-DIP (0.300", 7.62mm)
Win Source Part Number 777052-IRFD9010PBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRFD9010
Introduction Date March 04, 2008
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFD9010PBF CAD Model

Description

The Vishay Siliconix IRFD9010PBF is a MOSFET technology-based electronic component.

  • Package: 4-DIP (0.300", 7.62mm)
  • Mounting: Through hole
  • Maximum Power Dissipation: 1W (Tc)
  • Operating Temperature Range: -55°C ~ 150°C (TJ)

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