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Same model may have multiple batches, images only for reference.
IRFD9014PBF Real Image
Same model may have multiple batches, images only for reference.

IRFD9014PBF

Part No IRFD9014PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 1.1A 4-DIP
Datasheet
IRFD9014PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 270pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 500 mOhm @ 660mA, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package 4-DIP, Hexdip, HVMDIP
Dimension 4-DIP (0.300", 7.62mm)
Win Source Part Number 017592-IRFD9014PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFD9014PBF CAD Model

Description

The Vishay IRFD9014PBF is a P-Channel MOSFET designed for high-speed switching applications.

  • Maximum Power Dissipation: 1.3W
  • Drain-Source Breakdown Voltage: 60V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 12nC @ 10V
  • Maximum Rds On @ Id,Vgs: 500 mOhm @ 660mA, 10V
  • Package: 4-DIP, Hexdip, HVMDIP
  • Dimension: 0.300", 7.62mm
  • Applications: suitable for use in various applications such as power management, motor control, and lighting control

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Quantity Unit Price Ext. Price
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75+ $1.3715 $102.8625
115+ $1.3286 $152.7890
160+ $1.2857 $205.7120
205+ $1.2429 $254.7945
270+ $1.1143 $300.8610
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