The Vishay MOSFET is a high-performance N-Channel transistor designed for use in discrete semiconductor products.

• Maximum Power Dissipation: 35W (Tc)
• Drive Voltage: 10V
• Drain-Source Breakdown Voltage: 400V
• Continuous Drain Current at 25°C: 3.7A (Tc)
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Gate Charge: 38nC @ 10V
• Maximum Input Capacitance: 700pF @ 25V
• Maximum Rds On at Id,Vgs: 1 Ohm @ 2.1A, 10V
• Package: TO-220-3
• Mounting: through-hole mounting
• Temperature Range: -55°C to 150°C (TJ)
• Status: active component in the market.