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Same model may have multiple batches, images only for reference.
IRFI740GLCPBF Real Image
Same model may have multiple batches, images only for reference.

IRFI740GLCPBF

Part No IRFI740GLCPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 5.7A TO220FP
Datasheet
IRFI740GLCPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 1100pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 550 mOhm @ 3.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1046942-IRFI740GLCPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFI740GLCPBF CAD Model

Description

The IRFI740GLCPBF is an N-channel MOSFET electronic component manufactured by Vishay.

  • Application: Discrete semiconductor products
  • Maximum Power Dissipation: 40W (Tc)
  • Mounting: Through-hole
  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current: 5.7A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge @ 10V: 39nC
  • Maximum Rds on @ Id, Vgs: 550 mOhm @ 3.4A, 10V

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