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IRFIB5N65APBF

Part No IRFIB5N65APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 5.1A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 1417pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 930 mOhm @ 3.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 124938-IRFIB5N65APBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFIB5N65APBF CAD Model

Description

The Vishay 124938-IRFIB5N65APBF is an N-Channel MOSFET that is perfect for use in a variety of electronic devices.

  • Maximum Power Dissipation: 60W (Tc)
  • Continuous Drain Current: 5.1A (Tc) @ 25°C
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 930 mOhm @ 3.1A, 10V
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3728 $59.3200
60+ $1.9469 $116.8140
92+ $1.8861 $173.5212
127+ $1.8253 $231.8131
164+ $1.7644 $289.3616
220+ $1.5819 $348.0180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,950 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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