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IRFIB6N60APBF

Part No IRFIB6N60APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) TO-220FP / MOSFET N-CH 600V 5.5A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 49nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 138322-IRFIB6N60APBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRFIB6N60
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFIB6N60APBF CAD Model

Description

The Vishay IRFIB6N60APBF is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 60W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 5.5A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 750 mOhm @ 3.3A, 10V
  • Package: TO-220-3 with an isolated tab
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.9037 $53.9407
25+ $4.0235 $100.5875
39+ $3.8978 $152.0142
54+ $3.7721 $203.6934
69+ $3.6463 $251.5947
92+ $3.2691 $300.7572
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 52 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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