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Same model may have multiple batches, images only for reference.
IRFIB8N50K Real Image
Same model may have multiple batches, images only for reference.

IRFIB8N50K

Part No IRFIB8N50K
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 6.7A TO220FP
Datasheet
IRFIB8N50K Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 89nC @ 10V
Max Input Capacitance 2160pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 350 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1046956-IRFIB8N50K
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFIB8N50K CAD Model

Description

The Vishay 1046956-IRFIB8N50K MOSFET is a high-performance N-channel power MOSFET that is designed for use in various applications such as power supplies, motor control, and lighting.

  • Manufacturer: Vishay
  • Product Name: 1046956-IRFIB8N50K
  • Channel Type: N-channel
  • Power Dissipation: 45W
  • Continuous Drain Current: 6.7A @ 25°C
  • Drain-Source Breakdown Voltage: 500V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Rds on @ Id, Vgs: 350 mOhm @ 4A, 10V
  • Package: TO-220-3 full pack, isolated tab
  • Temperature Range: -55°C to 150°C
  • Status: Obsolete (EOL)

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Quantity Unit Price Ext. Price
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48+ $2.4567 $117.9216
73+ $2.3793 $173.6889
101+ $2.3031 $232.6131
130+ $2.2268 $289.4840
174+ $1.9958 $347.2692
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Availability: 21,500 pieces
MOQ: 20 pcs
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