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Same model may have multiple batches, images only for reference.
IRFIB8N50KPBF Real Image
Same model may have multiple batches, images only for reference.

IRFIB8N50KPBF

Part No IRFIB8N50KPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 6.7A TO220FP
Datasheet
IRFIB8N50KPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 89nC @ 10V
Max Input Capacitance 2160pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 350 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1046957-IRFIB8N50KPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFIB8N50KPBF CAD Model

Description

The Vishay IRFIB8N50KPBF is an N-channel MOSFET that is designed to handle up to 6.7A of continuous drain current @ 25°C.

  • Continuous Drain Current: 6.7A @ 25°C
  • Maximum Power Dissipation: 45W
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Package: TO-220-3
  • Feature: Isolated Tab
  • Operating Temperature: -55°C to 150°C
  • Maximum Rds On @ Id,Vgs: 350 mOhm @ 4A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.9949 $59.8980
47+ $2.4578 $115.5166
73+ $2.3805 $173.7765
101+ $2.3042 $232.7242
130+ $2.2268 $289.4840
174+ $1.9970 $347.4780
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Availability: 6,000 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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