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Same model may have multiple batches, images only for reference.
IRFIBC20GPBF Real Image
Same model may have multiple batches, images only for reference.

IRFIBC20GPBF

Part No IRFIBC20GPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.7A TO220FP
Datasheet
IRFIBC20GPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 4.4 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 100110-IRFIBC20GPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFIBC20GPBF CAD Model

Description

The Vishay 100110-IRFIBC20GPBF is a high-quality MOSFET component that is part of the Discrete Semiconductor Products category.

  • Maximum Power Dissipation: 30W (Tc)
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-220-3

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