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Same model may have multiple batches, images only for reference.
IRFPE40 Real Image
Same model may have multiple batches, images only for reference.

IRFPE40

Part No IRFPE40
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A) | MOSFET N-CH 800V 5.4A TO-247AC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 5.4A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2Ohm at 3.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 130nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1900pF at 25V
Power Dissipation (Maximum) 150W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1187823-IRFPE40
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFPE40 CAD Model

Description

The Vishay Siliconix 1187823-IRFPE40 MOSFET is an N-channel polarity component that is ideal for use in various discrete semiconductor products.

  • Mounting Type: Through Hole
  • Package: TO-247-3
  • Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 5.4A
  • Rds On (Maximum) @ Id, Vgs: 2Ohm @ 3.2A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 130nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Operating Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 150W

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