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IRFR110PBF

Part No IRFR110PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 4.3A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.3nC @ 10V
Max Input Capacitance 180pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 540 mOhm @ 2.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047013-IRFR110PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR110PBF CAD Model

Description

The Vishay IRFR110PBF is an N-channel MOSFET transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 4.3A @ 25°C.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 4.3A @ 25°C
  • Maximum Power Dissipation: 2.5W (Ta) or 25W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 540 mOhm @ 2.6A, 10V
  • Operating Temperature Range: -55°C to 150°C
  • Package: D-Pak
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Compliance: RoHS compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3746 $50.5710
285+ $0.3509 $100.0065
445+ $0.3390 $150.8550
635+ $0.3153 $200.2155
825+ $0.3035 $250.3875
1,030+ $0.2916 $300.3480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,100 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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