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IRFR320PBF

Part No IRFR320PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 3.1A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 1.8 Ohm @ 1.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 137582-IRFR320PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR320PBF CAD Model

Description

The Vishay IRFR320PBF is an N-channel MOSFET that can handle a maximum drain-source breakdown voltage of 400V and a continuous drain current of 3.1A @ 25°C.

  • Gate-Source Threshold Voltage: 4V
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Input Capacitance: 350pF @ 25V
  • Maximum Rds On at Id,Vgs: 1.8 Ohm @ 1.9A, 10V
  • Package: surface-mount D-Pak package
  • Operating Temperature Range: from -55°C to 150°C
  • Application: Suitable for use in various electronic circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4009 $50.1125
270+ $0.3756 $101.4120
415+ $0.3629 $150.6035
595+ $0.3375 $200.8125
770+ $0.3248 $250.0960
965+ $0.3121 $301.1765
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,290 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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