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Same model may have multiple batches, images only for reference.
IRFR9110TRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR9110TRLPBF

Part No IRFR9110TRLPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 3.1A DPAK
Datasheet
IRFR9110TRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.7nC @ 10V
Max Input Capacitance 200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 1.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 103087-IRFR9110TRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR9110TRLPBF CAD Model

Description

This Vishay MOSFET has a drain-source breakdown voltage of 100V and a continuous drain current of 3.1A (Tc) at 25°C.

  • Gate-Source Threshold Voltage: 4V at 250μA
  • Max Gate Charge: 8.7nC at 10V
  • Max Input Capacitance: 200pF at 25V
  • Max Rds On @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Polarity: P-channel
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Mounting Type: SMD (SMT)
  • Packaging: reel - TR
  • Supply and Demand Status: balanced

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