The IPD30N03S2L-20 is a 30V, 30A N-channel MOSFET from Infineon Technologies, belonging to the OptiMOS™ 2 Low Voltage family. It is designed for high-efficiency synchronous rectification in DC-DC converters and other power management applications. This MOSFET is characterized by its ultra-low on-resistance and high current capability, making it an efficient solution for low-voltage, high-current systems.

Applications:

• Synchronous Rectification in DC-DC Converters
• Point-of-Load (POL) Converters
• Battery Management Systems (BMS)
• Power Management in Notebooks and Servers
• Motor Control

Features:

• Ultra-Low On-Resistance (RDS(on))
• Optimized for Synchronous Rectification
• Avalanche Rated
• Logic Level
• 100% Avalanche Tested
• RoHS Compliant

Benefits:

• Improved Efficiency in DC-DC Conversion
• Reduced Power Loss and Heat Generation
• Simplified Thermal Design
• Extended Battery Life in Portable Applications
• Enhanced System Reliability
• Optimized for Low Voltage Applications

Technical Specifications:

The IPD30N03S2L-20 has a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 30A. The on-resistance (RDS(on)) is 2.0 mΩ at VGS = 10V. The gate-source threshold voltage (VGS(th)) is between 1V and 2V. It comes in a PG-TO252-3 package (DPAK). This MOSFET is designed for surface mount technology and is RoHS compliant.

The IPD30N03S2L-20's ultra-low on-resistance minimizes conduction losses, contributing to improved efficiency and reduced heat generation. It is optimized for synchronous rectification, making it ideal for use in DC-DC converters. Its avalanche rating and 100% avalanche testing ensure robustness and reliability. It is well-suited for use in battery-powered applications and portable devices where efficiency is crucial. The logic-level gate drive simplifies the design.