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IRFU9014PBF

Part No IRFU9014PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 5.1A I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 270pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 500 mOhm @ 3.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 001975-IRFU9014PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU9014PBF CAD Model

Description

The Vishay IRFU9014PBF is a MOSFET that has a maximum power dissipation of 2.5W (Ta) and 25W (Tc). The device is a P-channel and is mounted through hole using a TO-251AA package. It has a drive voltage of 10V and operates @ a temperature range of -55°C to 150°C. The device has a drain-source breakdown voltage of 60V and a continuous drain current of 5.1A (Tc). It has a gate-source threshold voltage of 4V @ 250μA and a maximum gate charge of 12nC @ 10V. The device has a maximum Rds On @ Id,Vgs of 500 mOhm @ 3.1A, 10V. The device is medium popularity and has a balance supply and demand status.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5393 $53.8755
80+ $1.2631 $101.0480
125+ $1.2236 $152.9500
170+ $1.1841 $201.2970
220+ $1.1447 $251.8340
295+ $1.0262 $302.7290
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,875 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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