The IRL630 is an N-channel MOSFET that is designed for use in discrete semiconductor products.

• Drain-Source Breakdown Voltage: With a drain-source breakdown voltage of 200V and a continuous drain current of 9A, this MOSFET can handle high power dissipation of up to 74W.
• Gate-Source Threshold Voltage: It has a gate-source threshold voltage of 2V and a maximum gate charge of 40nC @ 10V.
• Features: The IRL630 is a reliable and durable component that comes in a TO-220AB package and can be mounted using through-hole technology.
• Benefit: It is an ideal component for use in applications that require high power and efficiency.